IXBF32N300 データシートの表示（PDF） - IXYS CORPORATION
部品番号
コンポーネント説明
メーカー
IXBF32N300 Datasheet PDF : 5 Pages
| |||
Preliminary Technical Information
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBF32N300
VCES =
IC90 =
VCE(sat) ≤
3000V
22A
3.2V
(Electrically Isolated Tab)
Symbol Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 10Ω
Clamped Inductive Load
PC
TJ
TJM
Tstg
TL
TSOLD
FC
VISOL
Weight
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Force
50/60Hz, 1 Minute
Maximum Ratings
3000
V
3000
V
± 20
V
± 30
V
40
A
22
A
250
A
ICM = 80
A
VCES ≤ 2400
V
160
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
20..120 / 4.5..27
3000
Nm/lb.in.
V
5
g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE = 0.8 • VCES, VGE = 0V
IGES
VCE(sat)
VCE = 0V, VGE = ± 20V
IC = 32A, VGE = 15V, Note 1
Characteristic Values
Min. Typ. Max.
3000
V
2.5
5.0 V
TJ = 125°C
50 μA
2 mA
±100 nA
2.8
3.2 V
TJ = 125°C
3.5
V
ISOPLUS i4-PakTM
1
2
5
ISOLATED TAB
1 = Gate
2 = Emitter
5 = Collector
Features
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z Isolated Mounting Surface
z 3000V Electrical Isolation
z High Blocking Voltage
z International Standard Package
z Low Conduction Losses
Advantages
z Low Gate Drive Requirement
z High Power Density
Applications:
z Switched-Mode and Resonant-Mode
Power Supplies
z Uninterruptible Power Supplies (UPS)
z Laser Generators
z Capacitor Discharge Circuits
z AC Switches
© 2009 IXYS CORPORATION, All Rights Reserved
DS100119(02/09)
Share Link: 