IXBF32N300 データシートの表示（PDF） - IXYS CORPORATION
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IXBF32N300 Datasheet PDF : 5 Pages
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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ. Max.
gfS
IC = 32A, VCE = 10V, Note 1
16
26
S
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
3140
pF
124
pF
40
pF
Qg
Qge
IC = 32A, VGE = 15V, VCE = 1000V
Qgc
142
nC
20
nC
57
nC
td(on)
tr
td(off)
tf
Resistive Switching Times, TJ = 25°C
IC = 32A, VGE = 15V
VCE = 1250V, RG = 2Ω
50
185
160
720
ns
ns
ns
ns
td(on)
tr
td(off)
tf
Resistive Switching Times, TJ = 125°C
IC = 32A, VGE = 15V
VCE = 1250V, RG = 2Ω
58
515
165
630
ns
ns
ns
ns
RthJC
RthCS
0.78 °C/W
0.15
°C/W
IXBF32N300
ISOPLUS i4-PakTM (HV) (IXBF) Outline
Reverse Diode
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VF
IF = 32A, VGE = 0V
trr
IF = 16A, VGE = 0V, -diF/dt = 100A/μs
IRM
VR = 100V, VGE = 0V
Characteristic Values
Min. Typ. Max.
2.1 V
1.5
μs
33
A
Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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