Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
部品番号
コンポーネント説明
IXBF32N300 データシートの表示(PDF) - IXYS CORPORATION
部品番号
コンポーネント説明
メーカー
IXBF32N300
High Voltage, High Gain BIMOSFET™ Monolithic Bipolar MOS Transistor
IXYS CORPORATION
IXBF32N300 Datasheet PDF : 5 Pages
1
2
3
4
5
IXBF32N300
45
40
35
30
25
20
15
10
5
0
0
Fig. 7. Transconductance
T
J
= - 40ºC
25ºC
125ºC
10 20 30 40 50 60 70 80 90 100
I
C
- Amperes
100
90
80
70
60
50
40
30
20
10
0
0.0
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
T
J
= 25ºC
T
J
= 125ºC
0.5
1.0
1.5
2.0
2.5
3.0
V
F
- Volts
Fig. 9. Gate Charge
16
14
V
CE
= 1kV
I
C
= 32A
12
I
G
= 10mA
10
8
6
4
2
0
0
20
40
60
80
100
120
140
Q
G
- NanoCoulombs
10,000
1,000
f
= 1 MHz
Fig. 10. Capacitance
Cies
Coes
100
10
0
Cres
5
10
15
20
25
30
35
40
V
CE
- Volts
Fig. 11. Reverse-Bias Safe Operating Area
90
1.000
Fig. 12. Maximum Transient Thermal
Im pedance
80
70
60
0.100
50
40
30
20
T
J
= 125ºC
R
G
= 10
Ω
10
dV / dt < 10V / ns
0.010
0
0.001
500
1000
1500
2000
2500
3000
0.00001 0.0001
0.001
0.01
0.1
1
10
V
CE
- Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]