A92 データシートの表示（PDF） - Bruckewell Technology LTD

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A92

PNP Silicon Epitaxial Planar Transistor

Bruckewell Technology LTD 

A92

PNP Silicon Epitaxial Planar Transistor

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute maximum ratings (Ta=25°C)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-300

V

VCEO

Collector-Emitter Voltage

-300

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-0.5

A

PC

Collector Power Dissipation

500

mW

Tj,Tstg

Junction and Storage Temperature

-55 to 150

°C

ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified

Symbol Parameter

Test Conditions

V(BR)CBO Collector-base breakdown voltage

IC = -100μA , IE = 0

V(BR)CEO Collector-emitter breakdown voltage IC = -1 mA , IB = 0

V(BR)EBO

ICBO

IEBO

hFE

VCE(sat)

VBE(sat)

fT

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

IE = -100μA , IC = 0

VCB = -200 V , IB = 0

VEB = -3 V , IC = 0

VCE = -10 V , IC = -1 mA

VCE = -10 V , IC = -10 mA

VCE = -10 V , IC = -30 mA

IC = -20 mA , IB = -2 mA

IC = -20 mA , IB = -2 mA

VCE = -20 V , IC = -10 mA

f = 100MHz

Cob

Collector output capacitance

VCB= -20V , IE = 0

f = 1MHz

MIN

-300

-300

-5

60

100

60

TYP

300

50

6

MAX

-0.25

-0.1

UNIT

V

V

V

μA

μA

-0.5

V

-0.9

V

MHz

pF

Publication Order Number: [A92]

© Bruckewell Technology Corporation Rev. A -2014

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