HMC282 データシートの表示（PDF） - Hittite Microwave
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HMC282 Datasheet PDF : 6 Pages
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v01.0700
MICROWAVE CORPORATION
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HMC282
GaAs MMIC LOW NOISE
AMPLIFIER, 36 - 40 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC
general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127 mm (5 mil) thick alumina thin film substrates are recom-
mended for bringing RF to and from the chip (Figure 1). If 0.254 mm (10 mil) thick alumina thin film
substrates must be used, the die should be raised 0.150 mm (6 mils) so that the surface of the die is
coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102 mm (4 mil)
thick die to a 0.150 mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire
length. Typical die-to-substrate spacing is 0.076 mm (3 mils). Gold ribbon of 0.076 mm x 0.013 mm (3
mil x 0.5 mil) is recommended to minimize inductance on the RF ports. 0.025 mm (1 mil) diameter ball or
wedge bonds are acceptable for DC bias connections.
RF bypass capacitors should be used on the Vdd & Vgg inputs. 100 pF single layer capacitors (mounted
eutectically or by conductive epoxy) placed no further than 0.762 mm (30 mils) from the chip are recom-
mended.
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