STU11NB60 データシートの表示（PDF） - STMicroelectronics
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STU11NB60 Datasheet PDF : 5 Pages
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STU11NB60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on delay Time
Rise Time
Test Conditions
VDD = 300 V ID = 5.5 A
RG = 4.7 Ω
VGS = 10 V
Qg
Total Gate Charge
VDD = 480 V ID =11 A VGS = 10 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Min.
Typ.
27
12
Max.
Unit
ns
ns
55
71
nC
17
nC
23
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 480 V ID = 11 A
RG = 4.7 Ω VGS = 10 V
Min.
Typ.
20
15
32
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 11 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 11 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
11
44
Unit
A
A
1.6
V
600
ns
6.5
µC
20.5
A
3/5
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