M29W004B データシートの表示（PDF） - STMicroelectronics
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M29W004B Datasheet PDF : 30 Pages
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M29W004T, M29W004B
Table 14A. Read AC Characteristics
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)
M29W004T / M29W004B
Symbol Alt
Parameter
Test
Condition
-90
VCC = 3.0V to 3.6V
CL = 30pF
-100
VCC = 2.7V to 3.6V
CL = 30pF
Unit
Min
Max
Min
Max
tAVAV
tRC Address Valid to Next Address Valid
E = VIL,
G = VIL
90
100
ns
tAVQV tACC Address Valid to Output Valid
E = VIL,
G = VIL
90
100 ns
tELQX (1) tLZ Chip Enable Low to Output Transition G = VIL
0
0
ns
tELQV (2) tCE Chip Enable Low to Output Valid
G = VIL
90
100 ns
tGLQX (1)
tOLZ
Output Enable Low to Output
Transition
E = VIL
0
0
ns
tGLQV (2) tOE Output Enable Low to Output Valid
E = VIL
35
40
ns
tEHQX tOH Chip Enable High to Output Transition G = VIL
0
0
ns
tEHQZ (1) tHZ Chip Enable High to Output Hi-Z
G = VIL
30
30
ns
tGHQX
tOH
Output Enable High to Output
Transition
E = VIL
0
0
ns
tGHQZ (1) tDF Output Enable High to Output Hi-Z
E = VIL
30
30
ns
tAXQX
tOH
Address Transition to Output
Transition
E = VIL,
G = VIL
0
0
ns
tPLYH (1,3)
tRRB
tREADY
RP Low to Read Mode
10
10
µs
tPHEL tRH RP High to Chip Enable Low
50
50
ns
tPLPX
tRP RP Pulse Width
500
500
ns
Notes: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
3. To be considered only if the Reset pulse is given while the memory is in Erase mode.
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