BFG67 データシートの表示（PDF） - Philips Electronics

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BFG67

NPN 8 GHz wideband transistors

Philips Electronics 

Philips Semiconductors

NPN 8 GHz wideband transistors

Product specification

BFG67; BFG67/X; BFG67/XR

BFG67/X

f

(MHz)

1 000

VCE

(V)

8

IC

(mA)

5

Noise Parameters

Fmin

(dB)

1.3

Gamma (opt)

(mag) (ang)

0.375 65.9

Rn/50

0.304

BFG67/X

f

(MHz)

2 000

VCE

(V)

8

IC

(mA)

5

Noise Parameters

Fmin

(dB)

2.2

Gamma (opt)

(mag) (ang)

0.391 136.5

Rn/50

0.184

Average Gain Parameters

GMAX

(dB)

12

Gamma (max)

(mag)

0.839

(ang)

−170

1998 Oct 02

stability

circle

1

0.5

2

0.2

+j

0

−j

0.2

0.2

0.5

Fmin=1.3 dB

OPT

1

2

2 dB

3 dB

4 dB

5

10

5 10

∞

10

5

ZO = 50 Ω.

0.5

1

2

MBB316

Fig.14 Noise circle figure.

1

0.5

2

0.2

+j

0

–j

0.2

G max

Fmin=2.2 dB

4 dB

5

3 dB

OPT

5 dB

10

0.5

1

2

5 10

∞

=12dB 11 dB 10 dB

10

9 dB

0.2

5

8 dB

ZO = 50 Ω.

0.5

1

2

MBB315

Fig.15 Noise circle figure.

8

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