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IRF730B データシート - KERSEMI

IRF730B Datasheet PDF Kersemi Electronic Co., Ltd.

部品番号
IRF730B

コンポーネント説明

Other PDF
  not available.

PDF

page
9 Pages

File Size
1.3 MB

メーカー
KERSEMI
Kersemi Electronic Co., Ltd. GO URL

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.

Features
• 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V
• Low gate charge ( typical 25 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

 

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部品番号
コンポーネント説明
PDF
メーカー
400V N-Channel MOSFET
Fairchild Semiconductor
400V N-Channel MOSFET
Fairchild Semiconductor
400V N-Channel MOSFET
Semihow
400V N-Channel MOSFET
Fairchild Semiconductor
400V N-Channel MOSFET
Fairchild Semiconductor
400V N-Channel MOSFET
Fairchild Semiconductor
400V N-Channel MOSFET ( Rev : 2008 )
Fairchild Semiconductor
400V N-Channel MOSFET ( Rev : 2006 )
Fairchild Semiconductor
400V N-Channel MOSFET
Fairchild Semiconductor
400V N-Channel MOSFET
Fairchild Semiconductor

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