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30JL2C41

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TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
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Match & Start : 30JL2C41
Ohmite
Ohmite Mfg. Co.
High energy Wirewound
Ohmite
Ohmite Mfg. Co.
High energy Wirewound
Ohmite
Ohmite Mfg. Co.
High energy Wirewound
Toshiba
Toshiba
Discrete IGBT - 30G124 ~ 30F125
Ohmite
Ohmite Mfg. Co.
High energy Wirewound
Toshiba
Toshiba
Discrete IGBT - 30G124 ~ 30F125
Toshiba
Toshiba
Discrete IGBT - 30G124 ~ 30F125
Ohmite
Ohmite Mfg. Co.
High energy Wirewound
Ohmite
Ohmite Mfg. Co.
High energy Wirewound
Toshiba
Toshiba
Discrete IGBT - 30G124 ~ 30F125
Ohmite
Ohmite Mfg. Co.
High energy Wirewound
Toshiba
Toshiba
Discrete IGBT - 30G124 ~ 30F125
Ohmite
Ohmite Mfg. Co.
High energy Wirewound
Toshiba
Toshiba
Discrete IGBT - 30G124 ~ 30F125
Toshiba
Toshiba
Discrete IGBT - 30G124 ~ 30F125
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