DatasheetQ Logo
Electronic component search and free download site.Transistors,MosFET ,Diode,Integrated circuits

3N60R

   データシート
一致 , 類似
N/A
前一致
N/A
後一致
N/A
含む
メーカー
全て検索
Infineon Technologie...
メーカー
部品番号
コンポーネント説明
ビュー
Infineon
Infineon Technologies
RC-Drives Cost-Optimized IGBT for Consumer Drive Application
PDF
Infineon
Infineon Technologies
RC-Drive and RC-Drive Fast Cost-Optimized IGBT for Consumer Drive Applications
PDF
Infineon
Infineon Technologies
IGBT with integrated diode in packages offering space saving advantage
PDF
Match & Start : 3N60R
Infineon
Infineon Technologies
Cool MOS™ Power Transistor
ST-Microelectronics
STMicroelectronics
N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a DPAK package
ST-Microelectronics
STMicroelectronics
N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2 Power MOSFET in a TO-247 package
ON-Semiconductor
ON Semiconductor
TMOS E−FET.™ High Energy Power FET
KEC
KEC
N CHANNEL MOS FIELD EFFECT TRANSISTOR
VBSEMI
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
Fairchild
Fairchild Semiconductor
600V N-Channel MOSFET
Intersil
Intersil
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Fairchild
Fairchild Semiconductor
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Fairchild
Fairchild Semiconductor
800V N-Channel MOSFET
Fairchild
Fairchild Semiconductor
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
KEC
KEC
N CHANNEL MOS EFFECT TRANSISTOR
ST-Microelectronics
STMicroelectronics
N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a TO-220 package
Philips
Philips Electronics
PowerMOS transistors Avalanche energy rated
Intersil
Intersil
7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
1 2 3 4 5 6 7 8 9 10
Share Link: 

All Rights Reserved© datasheetq.com  [Privacy Policy ] [ Request Datasheet] [Contact Us]