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B5030

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3M
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3M™ EMI Absorber AB5000 Series
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3M
3M
EMI Absorber
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Match & Start : B5030
NJSEMI
New Jersey Semiconductor
N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH™ MOSFET
ST-Microelectronics
STMicroelectronics
N-CHANNEL 500V - 0.40 Ω - 14A - TO-247 PowerMESH™ MOSFET
ST-Microelectronics
STMicroelectronics
N-CHANNEL 500V - 0.33Ω - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET
ADI
Analog Devices
1-/2-Channel 15 V Digital Potentiometers
ST-Microelectronics
STMicroelectronics
N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH™ MOSFET
ST-Microelectronics
STMicroelectronics
N-CHANNEL 500V - 0.28Ω - 15.6A-Max220 PowerMESH MOSFET
ST-Microelectronics
STMicroelectronics
N-CHANNEL 500V - 0.55Ω - 10.6A - TO-220/TO-220FP PowerMESH™ MOSFET
Freescale
Freescale Semiconductor
Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz
Siemens
Siemens AG
NPN Silicon Power Transistors
Bourns
Bourns, Inc
Schottky Barrier Rectifier Chip Diode
Freescale
Freescale Semiconductor
Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz
Freescale
Freescale Semiconductor
Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz
Freescale
Freescale Semiconductor
Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz
Freescale
Freescale Semiconductor
Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz
Dallas
Dallas Semiconductor -> Maxim Integrated
Programmable One-Shot Pulse Generator
1 2 3 4 5 6 7 8 9
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