BUL642D2
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ON Semiconductor
High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network
ON Semiconductor
High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network
Match & Start : BUL642D2
Semelab - > TT Electronics plc
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Semelab - > TT Electronics plc
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Semelab - > TT Electronics plc
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Semelab - > TT Electronics plc
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Semelab - > TT Electronics plc
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Semelab - > TT Electronics plc
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Semelab - > TT Electronics plc
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Semelab - > TT Electronics plc
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Semelab - > TT Electronics plc
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Semelab - > TT Electronics plc
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Semelab - > TT Electronics plc
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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