PTFC270051M-V2-R1K
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Cree, Inc
High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz
Match & Start : PTFC270051M-V2-R1K
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
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