MPSA43 データシートの表示（PDF） - Philips Electronics
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MPSA43 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN high-voltage transistors
Product specification
MPSA42; MPSA43
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
MPSA42
MPSA43
IEBO
emitter cut-off current
MPSA42
MPSA43
hFE
DC current gain
VCEsat
VBEsat
Cc
fT
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
MPSA42
MPSA43
transition frequency
CONDITIONS
MIN.
IE = 0; VCB = 200 V
−
IE = 0; VCB = 160 V
−
IC = 0; VEB = 6 V
−
IC = 0; VEB = 4 V
−
VCE = 10 V; note 1
IC = 1 mA
25
IC = 10 mA
40
IC = 30 mA
40
IC = 20 mA; IB = 2 mA; note 1
−
IC = 20 mA; IB = 2 mA; note 1
−
IE = ie = 0; VCB = 20 V; f = 1 MHz
−
−
IC = 10 mA; VCE = 20 V; f = 100 MHz 50
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MAX. UNIT
100
nA
100
nA
100
nA
100
nA
−
−
−
500
mV
900
mV
3
pF
4
pF
−
MHz
1999 Apr 12
3
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