MRF949T1 データシートの表示（PDF） - Motorola => Freescale

部品番号

コンポーネント説明

メーカー

MRF949T1

NPN Silicon Low Noise Transistor

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

OFF CHARACTERISTICS (3)

Collector–Emitter Breakdown Voltage

(IC = 0.1 mA, IB = 0)

V(BR)CEO 10

12

—

Collector–Base Breakdown Voltage

(IC = 0.1 mA, IE = 0)

V(BR)CBO 20

23

—

Emitter Cutoff Current

(VEB = 1 V, IC = 0)

IEBO

—

—

0.1

Collector Cutoff Current

(VCB = 10 V, IE = 0)

ICBO

—

—

0.1

ON CHARACTERISTICS (3)

DC Current Gain (VCE = 6 V, IC = 5 mA)

hFE

50

—

—

DYNAMIC CHARACTERISTICS

Collector–Base Capacitance

(VCB = 1 V, IE = 0, f = 1 MHz)

(VCB = 5 V, IE = 0, f = 1 MHz)

Ccb

—

0.4

—

—

0.3

—

Current Gain — Bandwidth Product

(VCE = 6 V, IC = 30 mA, f = 1 GHz)

fT

—

9

—

PERFORMANCE CHARACTERISTICS

Conditions

Insertion Gain

(VCE = 1 V, IC = 1 mA, f = 1 GHz)

(VCE = 6 V, IC = 15 mA, f = 1 GHz)

Symbol

Min

Typ

Max

|S21|2

—

7

—

—

15

—

Maximum Unilateral Gain (4)

(VCE = 1 V, IC = 1 mA, f = 1 GHz)

(VCE = 6 V, IC = 15 mA, f = 1 GHz)

GUmax

—

13

—

—

17

—

Maximum Stable Gain and/or Maximum Available Gain (5)

(VCE = 1 V, IC = 1 mA, f = 1 GHz)

(VCE = 6 V, IC = 15 mA, f = 1 GHz)

MSG

MAG

—

12

—

—

18

—

Noise Figure — Minimum

(VCE = 1 V, IC = 1 mA, f = 1 GHz)

(VCE = 6 V, IC = 5 mA, f = 1 GHz)

NFmin

—

1.6

—

—

1.4

—

Noise Resistance

(VCE = 1 V, IC = 1 mA, f = 1 GHz)

(VCE = 6 V, IC = 5 mA, f = 1 GHz)

RN

—

24

—

—

19

—

Associated Gain at Minimum NF

(VCE = 1 V, IC = 1 mA, f = 1 GHz)

(VCE = 6 V, IC = 5 mA, f = 1 GHz)

GNF

—

10

—

—

15

—

Output Power at 1 dB Gain Compression (6)

(VCE = 6 V, IC = 15 mA, f = 1 GHz)

P1dB

—

+13

—

Output Third Order Intercept (6)

(VCE = 6 V, IC = 15 mA, f = 1 GHz)

OIP3

—

+28

—

(3) Pulse width ≤ 300 µs, duty cycle ≤ 2% pulsed.

" Ǹ (4)

Maximum

unilateral

gain

is

GUmax

=

|S21|2

(1 – |S11|2)(1 – |S22|2)

|S21|

(5) Maximum available gain and maximum stable gain are defined by the K factor as follows: MAG =

(K

K2 – 1) , if K > 1

(6) Zin = 50 Ω and Zout matched for optimum IP3.

|S12|

|S21|

MSG = |S12| , if K < 1

Unit

Vdc

Vdc

µA

µA

—

pF

GHz

Unit

dB

dB

dB

dB

Ω

dB

dBm

dBm

MRF949T1

2

MOTOROLA RF DEVICE DATA

Share Link: