BDB01 データシートの表示（PDF） - Motorola => Freescale

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BDB01

One Watt Amplifier Transistors

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

One Watt Amplifier Transistors

NPN Silicon

Order this document

by BDB01C/D

BDB01C,D

COLLECTOR

3

2

BASE

1

EMITTER

MAXIMUM RATINGS

Rating

Symbol BDB01C BDB01D

Unit

Collector – Emitter Voltage

Collector – Base Voltage

Emitter – Base Voltage

Collector Current — Continuous

Total Device Dissipation

@ TA = 25°C

Derate above 25°C

VCEO

VCES

VEBO

IC

PD

80

100

80

100

5.0

0.5

1.0

8.0

Vdc

Vdc

Vdc

Adc

Watt

mW/°C

Total Device Dissipation

@ TC = 25°C

Derate above 25°C

PD

2.5

Watt

20

mW/°C

Operating and Storage Junction

TJ, Tstg

– 55 to +150

°C

Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

125

Thermal Resistance, Junction to Case

RqJC

50

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

°C/W

°C/W

OFF CHARACTERISTICS

Collector – Emitter Voltage

(IC = 10 mA, IB = 0)

BDB01C

BDB01D

Collector Cutoff Current

(VCB = 80 V, IE = 0)

(VCB = 100 V, IE = 0)

Emitter Cutoff Current

(IC = 0, VEB = 5.0 V)

BDB01C

BDB01D

1

23

CASE 29–05, STYLE 1

TO–92 (TO–226AE)

Symbol

Min

Max

Unit

V(BR)CEO

80

100

ICBO

—

—

IEBO

—

Vdc

—

—

mAdc

0.01

0.01

100

nAdc

Motorola Small–Signal Transistors, FETs and Diodes Device Data

1

© Motorola, Inc. 1996

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