MJE5740G(2015) データシートの表示（PDF） - ON Semiconductor
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MJE5740G Datasheet PDF : 6 Pages
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MJE5740, MJE5742
TYPICAL CHARACTERISTICS
100
80
SECOND BREAKDOWN DERATING
60
THERMAL DERATING
40
20
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
IC(pk)
VCE(pk)
90% VCE(pk) 90% IC
IC
tsv
trv
tfi
tti
VCE
IB
90% IB1
tc
10% VCE(pk)
10%
IC(pk) 2% IC
TIME
Figure 2. Inductive Switching Measurements
2000
2.4
1000
VCE = 5 V
100
150°C
+ 25°C
- 55°C
2.2
hFE = 20
2
1.8
- 55°C
1.6
1.4
+ 25°C
1.2
1
+150°C
0.8
0.6
10
0.1
0.4
1
2
5
10
0.2
0.5
1
2
5
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain
Figure 4. Base−Emitter Voltage
1.8
1.6
hFE = 20
1.4
1.2
1
- 55°C
0.8
+ 25°C
0.6
+150°C
0.4
0.2
0.1
0.2
0.5
1
2
5
10
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Collector−Emitter Saturation Voltage
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