BFQ74 データシートの表示（PDF） - Siemens AG
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BFQ74 Datasheet PDF : 14 Pages
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NPN Silicon RF Transistor
q For low-noise amplifiers in the GHz range,
and broadband analog and digital applications
in telecommunications systems at collector
currents from 1 mA to 25 mA.
q Hermetically sealed ceramic package.
q HiRel/Mil screening available.
BFQ 74
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFQ 74
Marking
74
Ordering Code
(tape and reel)
Q62702-F788
Pin Configuration
1 2 34
B ECE
Package1)
Cerec-X
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage, VBE = 0
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, f ≥ 10 MHz
Base current
Total power dissipation, TS ≤ 115 ˚C3)
Junction temperature
Ambient temperature range
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point3)
Symbol
VCE0
VCES
VCB0
VEB0
IC
ICM
IB
Ptot
Tj
TA
Tstg
Values
Unit
16
V
25
25
2
35
mA
45
5
300
mW
175
˚C
– 65 … + 175
– 65 … + 175
Rth JA
Rth JS
≤ 280
K/W
≤ 200
1) For detailed dimensions see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
3) TS is measured on the collector lead at the soldering point to the pcb.
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