BDX35 データシートの表示（PDF） - Philips Electronics
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BDX35 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN switching transistors
Product specification
BDX35; BDX36; BDX37
FEATURES
• High current (max. 5 A)
• Low voltage (max. 75 V).
APPLICATIONS
• High-current switching in power applications.
DESCRIPTION
NPN switching transistor in a TO-126; SOT32 plastic
package.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
collector, connected to the metal part of
the mounting surface
base
handbook, halfpage
2
3
1
1 2 3 Top view
MAM254
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BDX35
BDX36; BDX37
VCEO
collector-emitter voltage
BDX35; BDX36
BDX37
IC
collector current (DC)
Ptot
total power dissipation
hFE
DC current gain
fT
transition frequency
toff
turn-off time
CONDITIONS
MIN.
open emitter
−
−
open base
−
−
−
Tmb ≤ 75 °C
−
IC = 0.5 A; VCE = 10 V
45
IC = 0.5 A; VCE = 5 V; f = 100 MHz −
ICon = 5 A; IBon = 0.5 A; IBoff = −0.5 A −
TYP.
−
−
−
−
−
−
−
100
350
MAX.
100
120
60
75
5
15
450
−
500
UNIT
V
V
V
V
A
W
MHz
ns
1997 Apr 16
2
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