C4747 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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C4747

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SC4747

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector surge current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

IC(surge)

PC*1

Tj

Tstg

Ratings

1500

800

6

10

20

50

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to emitter breakdown V(BR)CEO 800

—

voltage

Emitter to base breakdown

V(BR)EBO

6

—

voltage

Collector cutoff current

ICES

—

—

DC current transfer ratio

hFE

—

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter saturation

VBE(sat)

—

—

voltage

Fall time

tf

—

—

Max

—

Unit

V

Test conditions

IC = 10 mA, RBE = _

—

V

IE = 10 mA, IC = 0

500 µA

30

5

V

VCE = 1500 V, RBE = 0

VCE = 5 V, IC = 1 A

IC = 8 A, IB = 1.6 A

1.5 V

IC = 8 A, IB = 1.6 A

0.3 µs

ICP = 7 A, IB1 = 1.4 A

2

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