C4747 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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C4747

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SC4747

Collector to Emitter Saturation Voltage

vs. Collector Current

5

IC = 5 IB

Pulse

2

1.0

0.5

25°C

0.2 75°C

0.1

TC = –25°C

0.05

0.1 0.2

0.5 1.0 2

5 10

Collector current IC (A)

Base to Emitter Saturation Voltage

vs. Collector Current

10

5

IC = 5 IB

Pulse

2

TC = –25°C 25°C

1.0

0.5

75°C

0.2

0.1 0.2 0.5 1.0 2

5 10

Collector current IC (A)

Collector to Emitter Saturation Voltage

vs. Base Current

10

TC = 25°C

Pulse

8

IC = 6 A 8 A 10 A

6

4

2

0

0.1 0.2

0.5 1.0 2

5 10

Base current IB (A)

4

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