BFQ540 データシートの表示（PDF） - Philips Electronics
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BFQ540 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN wideband transistor
Product specification
BFQ540
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
V(BR)CBO
V(BR)CES
V(BR)EBO
ICBO
IEBO
hFE
fT
Ce
Cre
s21 2
Vo
collector-base breakdown voltage open emitter; IC = 10 µA; IE = 0 20
collector-emitter breakdown voltage RBE = 0; IC = 40 µA
15
emitter-base breakdown voltage IE = 100 µA; IC = 0
2
collector-base leakage current
VCB = 8 V; IE = 0
−
emitter-base leakage current
VCB = 1 V; IC = 0
−
DC current gain
IC = 40 mA; VCE = 8 V
100
transition frequency
IC = 40 mA; VCE = 8 V;
−
fm = 1 GHz
emitter capacitance
IC = ie = 0; VEB = 0.5 V; f = 1 MHz −
feedback capacitance
IC = 0; VCE = 8 V; f = 1 MHz
−
insertion power gain
IC = 40 mA; VCE = 8 V;
12
f = 900 MHz; Tamb = 25 °C
output voltage
note 1
−
note 2
−
d2
second order intermodulation
note 3
−
distortion
F
noise figure
IC = 40 mA; VCE = 8 V;
−
f = 900 MHz; ΓS = Γopt
TYP.
−
−
−
−
−
120
9
2
0.9
13
500
350
−
1.9
MAX. UNIT
−
V
−
V
−
V
50
nA
200 nA
250
−
GHz
−
pF
−
pF
−
dB
−
mV
−
mV
−53 dB
2.4 dB
Notes
1. dim = −60 dB (DIN45004B); VCE = 8 V; IC = 40 mA; RL = 50 Ω;
Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.5 MHz;
measured at fp + fq − fr = 793.25 MHz.
2. dim = −60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; RL = 50 Ω;
Vp = Vq = Vo; fp = 806 MHz; fq = 810 MHz;
measured at 2fp − fq = 802 MHz.
3. IC = 40 mA; VCE = 8 V; RL = 50 Ω;
Vp = Vq = 225 mV; fp = 250 MHz; fq = 560 MHz;
measured at fp + fq = 810 MHz.
2000 May 23
4
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