RMDA00100(2001) データシートの表示（PDF） - Raytheon Company

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RMDA00100
(Rev.:2001)

OC-192 Modulator Driver MMIC

Raytheon Company 

RMDA00100

OC-192 Modulator Driver MMIC

Figure 3

Recommended

Assembly Diagram

Vd

(+8V)

10,000pF

5mil Thick

Alumina

50-Ohm

RF

Input

Piconics

Spiral

Inductors

Die-Attach

80Au/20Sn

ADVANCED INFORMATION

5 mil Thick

Alumina

50-Ohm

RF

Output

2 mil Gap

100pF

10,000pF

100pF

L< 0.015”

(2 Places)

10,000pF

Vg1

(-ve)

10,000pF

Recommended

Procedure

for Biasing and

Operation

CAUTION: THIS IS AN ESD SENSITIVE DEVICE. LOSS OF GATE VOLTAGES (Vg1) WHILE DRAIN VOLTAGES (Vg1)

IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP.

The following sequence must be followed to properly test the amplifier.

Step 1:

Step 2:

Step 3:

Step 4:

Turn off RF input power.

Connect the DC supply grounds to the ground

of the chip carrier. Apply negative gate bias

supply voltage of –1.0 V to Vg1.

Apply positive drain bias supply voltage of

+8.0 V to Vd, and monitor drain current Id.

Adjust gate bias voltage Vg1 to set the

quiescent current of Idq ~ 100 mA.

Step 5:

Step 6:

After the bias connection is established, the

RF input signal may now be applied at the

appropriate frequency band. Adjust Vg1 for

best gain flatness.

Follow turn-off sequence of:

(i) Turn off RF Input Power

(ii) Turn down and off drain voltage (Vd).

(iii) Turn down and off gate voltages(Vg1).

Note: When the device is under RF operation, the supply current Id will increase depending upon output power required.

www.raytheon.com/micro

Characteristic performance data and specifications are subject to change without notice.

Revised November 14, 2001

Page 3

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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