MPSW56RLRP データシートの表示（PDF） - ON Semiconductor

部品番号

コンポーネント説明

メーカー

MPSW56RLRP

One Watt Amplifier Transistors

ON Semiconductor 

MPSW55 MPSW56

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS(1)

DC Current Gain

(IC = –50 mAdc, VCE = –1.0 Vdc)

(IC = –250 mAdc, VCE = –1.0 Vdc)

Collector–Emitter Saturation Voltage

(IC = –250 mAdc, IB = –10 mAdc)

hFE

—

100

—

50

—

VCE(sat)

—

–0.5

Vdc

Base–Emitter On Voltage

(IC = –250 mAdc, VCE = –5.0 Vdc)

VBE(on)

—

–1.2

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = –250 mAdc, VCE = –5.0 Vdc, f = 20 MHz)

fT

50

—

MHz

Output Capacitance

(VCB = –10 Vdc, f = 1.0 MHz)

Cobo

—

15

pF

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

400

TJ = 125°C

200

25°C

-55°C

100

80

60

40

-0.5 -0.7 -1.0

-2.0 -3.0

-5.0 -7.0 -10

-20 -30

IC, COLLECTOR CURRENT (mA)

-50 -70 -100

Figure 1. DC Current Gain

VCE = -1.0 V

-200 -300 -500

-1.0

TJ = 25°C

-0.8

-0.6

IC = -10 mA

-50

mA

-100 mA

-250 mA -500 mA

-0.4

-1.0

TJ = 25°C

-0.8

VBE(sat) @ IC/IB = 10

-0.6

VBE(on) @ VCE = -1.0 V

-0.4

-0.2

0

-0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50

IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

-0.2

VCE(sat) @ IC/IB = 10

0

-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500

IC, COLLECTOR CURRENT (mA)

Figure 3. “On” Voltages

http://onsemi.com

2

Share Link: