MPSW55RLRA データシートの表示（PDF） - ON Semiconductor

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MPSW55RLRA

One Watt Amplifier Transistors

ON Semiconductor 

MPSW55 MPSW56

-0.8

-1.2

-1.6

-2.0

θVB for VBE

100

70

Cibo

TJ = 25°C

50

30

20

-2.4

-2.8

-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500

IC, COLLECTOR CURRENT (mA)

Figure 4. Base–Emitter Temperature Coefficient

10

7.0

5.0

-0.1 -0.2

-0.5 -1.0 -2.0 -5.0 -10 -20

VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Capacitance

Cobo

-50 -100

200

VCE = -2.0 V

TJ = 25°C

100

70

50

30

20

-2.0 -3.0 -5.0 -7.0 -10

-20 -30 -50 -70 -100 -200

IC, COLLECTOR CURRENT (mA)

Figure 6. Current–Gain — Bandwidth Product

-2 k

-1 k

-500

-200

-100

-50

-20

-10

-1.0

DUTY CYCLE ≤ 10%

1.0 ms

TA = 25°C

TC = 25°C

1.0 s

dc

dc

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

MPSW55

MPSW56

-2.0

-5.0 -10 -20

100 µs

-60 -80 -100

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 7. Active Region — Safe Operating

Area

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