STS7PF30L データシートの表示（PDF） - STMicroelectronics

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STS7PF30L

P-CHANNEL 30V - 0.16Ω - 7A - SO-8 STripFET™ II Power MOSFET

STMicroelectronics 

2 Electrical characteristics

STS7PF30L

Table 6. Source-Drain Diode

Symbol

Parameter

Test Conditions

ISD

Source-Drain Current

ISDM Note 1 Source-Drain Current (pulsed)

VSD

Forward On Voltage

ISD = 7A, VGS = 0

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 7A, di/dt = 100A/µs

VDD = 15V, Tj = 150°C

(see Figure 15)

Min.

Typ.

40

46

2.3

Max. Unit

7

A

28

A

1.2

V

ns

nC

A

(1) Pulse with limited by safe operating area

(2) When mounted on 1inch² FR-4 board (t ≤ 10µs)

(3) Pulsed: pulse duration = 300µs, duty cycle 1.5%

Note: For the P-CHANNEL MOSFET the polarity of voltages and current have to be reversed

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