2SJ355-T1 データシートの表示（PDF） - NEC => Renesas Technology
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2SJ355-T1 Datasheet PDF : 6 Pages
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2SJ355
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
SYMBOL
Drain Cut-Off Current
IDSS
Gate Leakage Current
IGSS
Gate Cut-Off Voltage
VGS(off)
Forward Transfer Admittance
|yfs|
Drain to Source On-State Resistance RDS(on)1
Drain to Source On-State Resistance RDS(on)2
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Gate Input Charge
QG
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Internal Diode Reverse Recovery Time trr
Internal Diode Reverse Recovery Charge Qrr
TEST CONDITIONS
VDS = –30 V, VGS = 0
VGS = –16/+10 V, VDS = 0
VDS = –10 V, ID = –1 mA
VDS = –10 V, ID = –1.0 A
VGS = –4 V, ID = –1.0 A
VGS = –10 V, ID = –1.0 A
VDS = –10 V, VGS = 0,
f = 1.0 MHz
VDD = –25 V, ID = –1.0 A
VGS(on) = –10 V
RG = 10 Ω, RL = 25 Ω
VDS = –24 V,
VGS = –10 V,
ID = –1.8 A, IG = –2 mA
IF = 2.0 A,
di/dt = 50 A/µs
MIN.
–1.0
1.0
TYP.
–1.5
0.50
0.26
300
245
120
5.5
32
110
130
12.2
1.2
4.6
95
85
MAX.
–10
±10
–2.0
0.60
0.35
UNIT
µA
µA
V
S
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
ns
nC
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
25 50 75 100 125 150
TA - Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
–10
–5
–2
10 ms
PW
–1
–0.5
DC
= 100 ms
–0.2
–0.1
Single pulse
–0.05
–0.5 –1 –2
–5 –10 –20
–50 –100
VDS - Drain to Source Voltage - V
2
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