2SJ520 データシートの表示（PDF） - SANYO -> Panasonic

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2SJ520

P-Channel Silicon MOSFET

SANYO -> Panasonic 

2SJ520

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Symbol

VDSS

VGSS

ID

IDP

Allowable Power Dissipation

PD

Channel Temperature

Tch

Storage Temperature

Tstg

Electrical Characteristics at Ta = 25˚C

Conditions

PW≤10µs, duty cycle≤1%

Tc=25˚C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain "Miller" Charge

Diode Forward Voltage

Marking : J520

Symbol

Conditions

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

ID=–1mA, VGS=0

VDS=–20V, VGS=0

VGS=±8V, VDS=0

VDS=–10V, ID=–1mA

VDS=–10V, ID=–5A

ID=–5A, VGS=–4V

ID=–1A, VGS=–2.5V

VDS=–10V, f=1MHz

VDS=–10V, f=1MHz

VDS=–10V, f=1MHz

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

VDS=–10V, VGS=–10V, ID=–5A

VDS=–10V, VGS=–10V, ID=–5A

VDS=–10V, VGS=–10V, ID=–5A

IS=–5A, VGS=0

Switching Time Test Circuit

VIN

0V

--4V

PW=10µs

D.C.≤1%

VIN

G

VDD=--10V

ID=--5A

RL=2Ω

D

VOUT

P.G

50Ω

2SJ520

S

Ratings

Unit

–20 V

±10 V

–10 A

–40 A

1W

20 W

150 ˚C

–55 to +150 ˚C

Ratings

Unit

min

typ

max

–20

V

–10 µA

±10 µA

–0.4

–1.3 V

8

12

S

48

62 mΩ

70 100 mΩ

950

pF

530

pF

160

pF

20

ns

200

ns

230

ns

230

ns

30

nC

5

nC

7

nC

–1.0 –1.5 V

No.6435–2/4

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