10AM12 データシートの表示（PDF） - GHz Technology
部品番号
コンポーネント説明
メーカー
10AM12 Datasheet PDF : 2 Pages
| |||
10AM12
12 Watts, 20 Volts, Class A
Linear to 1000 MHz
GENERAL DESCRIPTION
The 10AM12 is a COMMON EMITTER transistor capable of providing 12
Watts of Class A, RF output power to 1000 MHz. This transistor is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
79 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
45 Volts
3.5 Volts
4.0 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to +150oC
+200oC
CASE OUTLINE
55JT, STYLE 2
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout-1dB
Pin
Pg
Ft
VSWR
Power Out @ 1 dB Compr.
Power Input
Power Gain Small Signal
Transition Frequency
Load Mismatch Tolerance
F = 1.0 GHz
12
13
Watts
Ic = 3.0 A
2.0 Watts
Vcc = 20 Volts
7.5 8.5
dB
Vce = 20 V, Ic =1.8 A
2.0
2.5
GHz
30:1
BVebo1 Emitter to Base Breakdown
Ie = 12 mA
3.5
Volts
BVces1
Collector to Emitter Breakdown Ic = 25 mA
45
Volts
BVceo1 Collector to Emitter Breakdown Ic = 25 mA
25
Volts
hFE 1
Cob1
θjc
DC Current Gain
Output Capacitance
Thermal Resistance
Vce = 5V, Ic =1000 mA 20
Vcb = 28V, f =1.0 MHz
20
25
pF
2.0
2.2
oC/W
Note 1: Per Side
Issue A July 1997
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
Share Link: 