UPG2110TB-E3 データシートの表示（PDF） - NEC => Renesas Technology
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UPG2110TB-E3 Datasheet PDF : 12 Pages
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µPG2106TB, µPG2110TB
[µPG2110TB]
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
Pin No.
1
2
3
Connection
VDD1
GND
VDD2 & OUT
Pin No.
4
5
6
Connection
VAGC
GND
IN
Top View
3
4
Bottom View
4
3
2
5
5
2
1
6
6
1
1
2
3
G1Y
6
5
4
Top View
3
4
2
5
1
6
RECOMMENDED OPERATING CONDITIONS (TA = +25 °C)
Parameter
Supply Voltage
Input Power
AGC Control Voltage
Symbol
VDD1, VDD2
Pin
VAGC
MIN.
+2.7
−
0
TYP.
+3.0
−18
−
MAX.
+3.3
−10
2.5
Unit
V
dBm
V
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, TA = +25 °C, VDD1 = VDD2 = +3.0 V, π /4DQPSK modulated signal input, External
input and output matching)
Parameter
Operating Frequency
Power Gain
Total Current
Adjacent Channel
Power Leakage 1
Adjacent Channel
Power Leakage 2
Variable Gain Range
AGC Control Current
Symbol
f
Gp
IDD
Padj1
Padj2
∆G
IAGC
Test Conditions
Pin = −18 dBm, VAGC = 2.5 V
Pout = +8 dBm, VAGC = 2.5 V
Pout = +8 dBm, VAGC = 2.5 V
∆f = ±50 kHz, 21 kHz Band Width
Pout = +8 dBm, VAGC = 2.5 V
∆f = ±100 kHz, 21 kHz Band Width
Pin = −18 dBm, VAGC = 0.5 to 2.5 V
VAGC = 0.5 to 2.5 V
MIN.
1429
24
−
−
−
35
−
TYP.
−
27
25
−60
−70
40
200
MAX.
1453
−
35
−55
−65
−
500
Unit
MHz
dB
mA
dBc
dB
µA
Preliminary Data Sheet P14318EJ1V0DS00
3
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