1819AB12 データシートの表示（PDF） - GHz Technology
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1819AB12 Datasheet PDF : 1 Pages
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1819AB12
12 Watts, 25 Volts, Class AB
Personal 1808 - 1880 MHz
GENERAL DESCRIPTION
The 1819AB12 is a COMMON EMITTER transistor capable of providing 12
Watts of Class AB, RF output power over the band 1808-1880 MHz. This
transistor is specifically designed for PERSONAL COMMUNICATIONS
BASE STATION amplifier applications. It includes Input prematching and
utilizes Gold metalization and HIGH VALUE EMITTER ballasting to provide
high reliability and supreme ruggedness. .
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
30 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
60Volts
3.5 Volts
3.5 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 150oC
+ 200oC
CASE OUTLINE
55CT, STYLE 2
COMMON EMITTER
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
ηc
VSWR1
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F =1880 MHz
Vce = 25 Volts
Icq = 0.13 Amps
As Above
MIN
12
7.5
TYP
8.0
43
MAX UNITS
Watt
2.2
Watt
dB
%
3:1
BVces
BVebo
Ices
hFE
Cob
θjc
Collector to Emitter Breakdown
Emitter to Base Breakdown
Collector Leakage Current
DC - Current Gain
Output Capacitance
Thermal Resistance
Ic = 50 mA
Ie = 10 mA
Vce = 27 Volts
Vce = 5 V, Ic = 0.5 A
F =1 MHz, Vcb = 28 V
Tc = 25oC
60
Volts
3.5
Volts
3
mA
20
100
12
pF
3.8
oC/W
Initial Issue February 1995
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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