1417-12A データシートの表示（PDF） - GHz Technology
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1417-12A Datasheet PDF : 2 Pages
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1417 - 12A
12 Watt - 28 Volts, Class C
Microwave 1400 - 1700 MHz
GENERAL DESCRIPTION
The 1417-12A is a COMMON BASE transistor capable of providing 12
Watts of Class C, RF output power over the band 1400-1700 MHz. This
transistor is designed for Microwave Broadband Class C amplifier
applications. It includes Input prematching and utilizes Gold metalization and
diffused ballasting to provide high reliability and supreme ruggedness. The
transistor uses a fully hermetic high temperature solder sealed package.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
29 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
50 Volts
3.5 Volts
2.0 A
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200oC
+ 200oC
CASE OUTLINE
55LV, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
ηc
VSWR1
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1.4-1.7 GHz
Vcb = 28 Volts
Pin = 2.4 Watts
As Above
F = 1.7 GHz, Pin = 2.4 W
MIN
12.0
7.0
TYP
8.7
40
MAX UNITS
Watt
2.4
Watt
dB
%
30:1
BVces
BVebo
Icbo
hFE
Cob
θjc
Collector to Emitter Breakdown Ic = 80 mA
50
Volts
Emitter to Base Breakdown
Ie = 2.0 mA
3.5
Volts
Collector to Base Current
Vcb = 28 Volts
2.0
mA
Current Gain
Vce = 5 V, Ic = 800 mA
20
Output Capacitance
Thermal Resistance
F =1.0 MHz, Vcb = 28 V
12
pF
6.0
oC/W
Issue February 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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