M28C64C データシートの表示（PDF） - STMicroelectronics

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M28C64C

64 Kbit (8Kb x8) Parallel EEPROM

STMicroelectronics 

M28C64C

M28C64X

64 Kbit (8Kb x8) Parallel EEPROM

FAST ACCESS TIME: 150ns

SINGLE 5V ± 10% SUPPLY VOLTAGE

LOW POWER CONSUMPTION

FAST WRITE CYCLE

– 32 Bytes Page Write Operation

– Byte or Page Write Cycle: 5ms

ENHANCED END OF WRITE DETECTION

– Ready/Busy Open Drain Output

(for M28C64C product only)

– Data Polling

– Toggle Bit

PAGE LOAD TIMER STATUS BIT

HIGH RELIABILITY SINGLE POLYSILICON,

CMOS TECHNOLOGY

– Endurance >100,000 Erase/Write Cycles

– Data Retention >40 Years

JEDEC APPROVED BYTEWIDE PIN OUT

28

1

PDIP28 (P)

28

1

SO28 (MS)

300 mils

PLCC32 (K)

TSOP28 (N)

8 x13.4mm

DESCRIPTION

The M28C64C is an 8 Kbit x8 low power Parallel

EEPROM fabricated with STMicroelectronics pro-

prietary single polysilicon CMOS technology. The

device offers fast access time with low power dis-

sipation and requires a 5V power supply.

The circuit has been designed to offer a flexible

microcontroller interface featuring both hardware

and software handshakingmode with Ready/Busy,

Data Polling and Toggle Bit. The M28C64C sup-

ports 32 byte page write operation.

Figure 1. Logic Diagram

VCC

13

A0-A12

8

DQ0-DQ7

Table 1. Signal Names

A0 - A12 Address Input

DQ0 - DQ7 Data Input / Output

W

Write Enable

E

Chip Enable

G

Output Enable

RB

Ready / Busy

VCC

Supply Voltage

VSS

Ground

W

M28C64C

E

RB

G

VSS

AI00746B

February 1999

1/15

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