UPA1812 データシートの表示（PDF） - NEC => Renesas Technology
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UPA1812 Datasheet PDF : 8 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1812
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1812 is a switching device which can be
driven directly by a 4.0-V power source.
8
The µPA1812 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
PACKAGE DRAWING (Unit : mm)
5
1, 5, 8 : Drain
2, 3, 6, 7: Source
4
: Gate
1.2 MAX.
1.0±0.05
0.25
FEATURES
• Can be driven by a 4.0-V power source
• • Low on-state resistance
RDS(on)1 = 39 mΩ MAX. (VGS = –10 V, ID = –2.5 A)
RDS(on)2 = 63 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)
RDS(on)3 = 69 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A)
1
4
3.15 ±0.15
3.0 ±0.1
3°
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1812GR-9JG
Power TSSOP8
0.65 0.8 MAX.
0.1
0.27
+0.03
–0.08
0.10 M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–30
V
Gate to Source Voltage
VGSS
–20/+5
V
EQUIVALENT CIRCUIT
Drain
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
ID(DC)
±5.0
A
ID(pulse)
±20
A
PT
2.0
W
Gate
Body
Diode
Channel Temperature
Storage Temperature
Tch
150
°C
Tstg –55 to +150 °C
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D12967EJ1V0DS00 (1st edition)
The mark 5 shows major revised points.
©
Date Published October 1999 NS CP(K)
Printed in Japan
1997, 1999
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