DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4.0
3.0
2.0
VGS = –10 V
1.0
0
ID = –2.0 A
–50
0
50 100 150
Tch - Channel Temperature - ˚C
1000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
Ciss
f = 1 MHz
100
Coss
Crss
10
1.0
–1.0
–10
–100
–1000
VDS - Drain to Source Voltage - V
10000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/ µs
VGS = 0 V
1000
100
10
0.1
1.0
10
100
ID - Drain Current - A
2SJ448
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
VGS = 0 V
1
−10 V
0.1
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
1000
100
10
SWITCHING CHARACTERISTICS
tr
tf
td(off)
td(on)
1.0
–0.1
–1.0
VDD = –125 V
VGS = –10 V
RG = 10 Ω
–10
–100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
–200
–16
ID = –4.0 A
VDD= –200 V
–12
–125 V
–50 V
–100
–8
–4
0
0
4
8
12
16
QG - Gate Charge - nC
Data Sheet D10029EJ2V0DS
5