2SJ448 データシートの表示（PDF） - NEC => Renesas Technology

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コンポーネント説明

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2SJ448

SWITCHING P-CHANNEL POWER MOS FET

NEC => Renesas Technology 

PACKAGE DRAWING (Unit: mm)

Isolated TO-220(MP-45F)

10.0 ± 0.3

4.5 ± 0.2

φ 3.2 ± 0.2

2.7 ± 0.2

0.7 ± 0.1

2.54

1.3 ± 0.2

2.5 ± 0.1

1.5 ± 0.2 0.65 ± 0.1

2.54

123

1.Gate

2.Drain

3.Source

2SJ448

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

Gate

Protection

Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

Data Sheet D10029EJ2V0DS

7

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