RMPA1901-53 データシートの表示（PDF） - Raytheon Company
部品番号
コンポーネント説明
メーカー
RMPA1901-53 Datasheet PDF : 5 Pages
| |||
RMPA1901-53
PCS CDMA GaAs MMIC
Power Amplifier
PRODUCT INFORMATION
Description
The RMPA1901-53 is a monolithic high efficiency power amplifier for PCS CDMA applications. Performance
parameters may be slightly adjusted by “tweaking” the off-chip matching components. The amplifier circuit design
is a single ended configuration that utilizes harmonic tuning for increased power added efficiency and linearity. The
device uses Raytheon’s Pseudomorphic High Electron Mobility Transistor (pHEMT) process.
Features
Positive supply voltage of 5.8V, nominal
Efficiency of 34%, typical, for digital CDMA power out of 28.5 dBm
ACPR of 50 dBc, typical, for digital CDMA power out of 28.5 dBm
Small outline metal based quad plastic package
Absolute
Maximum
Ratings
Parameter
Positive DC Voltage
Negative DC Voltage
Simultaneous (Vd-Vg)
RF Input Power (from 50-Ohm source)
Operating Case Temperature
Storage Temperature Range
Thermal Resistance (Channel to case)
Symbol
Vd1,Vd2
Vg1,Vg2
Vdg
PIN
TC
TStg
Rjc
Value
+9
-6
+12
+10
-30 to +90
-35 to +110
+18
Units
Volts
Volts
Volts
dBm
°C
°C
°C/W
Electrical
Characteristics
Specifications at
25°C unless
otherwise noted.
Parameter
Min Typ Max Unit
Frequency Range
1850
1710
Gain (Small Signal)
Gain Variation vs Temp
Gain Linearity
(0 dBm ≤ Pout ≤ 28.5 dBm) -1.0
Noise Power
(1930-1990 MHz)
(All Power Levels)
Input VSWR (50Ω)
Stability (All spurious)1
29
-0.03
1910
1785
+1.0
-135
2.0:1
-70
MHz
MHz
dB
dB/°C
dB
dBm/Hz
---
dBc
Parameter
Min
Harmonics (Po ≤ 28.5 dBm)
2fo, 3fo, 4fo
Efficiency
Po = 800 mW, Vdd=5.8V
Po = 40 mW, Vdd=5.8V
ACPR (Offset ≤± MHz)2
Noise Figure (over temp.)
Quiescent Current
Vdd
Vg1/Vg2, Vg3 (<5 mA)3
-1.5
Case Operating Temp
-30
Typ Max
-30
34
5
50
7.0
80
5.8
-0.3
+90
Unit
dBc
%
%
dBc
dB
mA
Volts
Volts
°C
www.raytheon.com/micro
Notes:
1. Source/Load VSWR ≤ 3:1 (All Angles, -50 dBm<Po<28.5 dBm) or Load VSWR ≥ 20:1 (Out of Band, All Angles, Tc=-40 to +110°C)
2. Po ≤ 28.5 dBm at Vdd=5.8V; CDMA Waveform measured using the ratio of the average power within the 1.23 MHz channel and within a 30
kHz bandwidth at a 1.25 MHz offset.
3. Vg1=Vg2 and Vg3 adjusted for Quiescent Current of Idq1 & Idq2 = 35 mA, and Idq3 = 45 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised May 14, 1999
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Share Link: 