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HS7541AAP データシートの表示(PDF) - Signal Processing Technologies

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HS7541AAP
Sipex
Signal Processing Technologies Sipex
HS7541AAP Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted.)
These are stress ratings only and functional operation of the device
at these or any other above those indicated in the operation
sections of the specifications below is not implied. Exposure to
absolute maximum rating conditions for extended periods of time
may affect reliability.
V to GND .................................................................. –0.3V, +17V
DD
Digital Input Voltage to GND ................................. –0.3V, V +0.3V
DD
VREF or VRFB to GND ................................................................ ±25V
Output Voltage (Pin 1, Pin 2) ................................ –0.3V, V +0.3V
DD
Power Dissipation (Any Package to +75°C) ........................ 450mW
Derates above 75°C by ...................................................... 6mW/°C
Dice Junction Temperature ................................................. +150°C
Storage Temperature ............................................ –65°C to +150°C
Lead Temperature (Soldering, 60 seconds) ........................ +300°C
CAUTION:
ESD (ElectroStatic Discharge) sensitive
device. Permanent damage may occur on
unconnected devices subject to high energy
electrostatic fields. Unused devices must be
stored in conductive foam or shunts.
Personnel should be properly grounded prior
to handling this device. The protective foam
should be discharged to the destination
socket before devices are removed.
SPECIFICATIONS
(TA=25°C; VDD =+15V, VREF = +10V; IO1 = IO2 = GND = 0V; unipolar unless otherwise noted.)
PARAMETER
MIN. TYP. MAX.
UNIT
STATIC PERFORMANCE
Resolution
12
Integral Non-Linearity
-AJ, -AA
-AK, -AB
Differential Non-Linearity
-AJ, -AA
-AK, -AB
Gain Error
-AJ, -AA
-AK, -AB
Output Leakage Current
Bits
±1.0
LSB
±0.5
LSB
±1.0
LSB
±0.5
LSB
±6
LSB
±8
LSB
±3
LSB
±5
LSB
±5
nA
±10
nA
AC PERFORMANCE CHARACTERISTICS
Propagation Delay
Current Settling Time
Output Capacitance
CIO1 (Pin 16)
CIO2 (Pin 15)
CIO1 (Pin 16)
CIO2 (Pin 15)
Glitch Energy
Multiplying Feedthrough Error
STABILITY
Gain Error TC
INL TC
DNL TC
Power Supply Rejection Ratio
REFERENCE INPUT
Input Resistance
7
Input Resistance TC
Voltage Range
100
0.6
200
70
70
200
1,000
1.0
0.1
±1.0
±0.1
±0.1
10
±150
±0.02
15
±25
ns
µs
pF
pF
pF
pF
nVs
mVP-P
mVP-P
ppm/°C
ppm/°C
ppm/°C
%/%
K
ppm/°C
Volts
CONDITIONS
Note 6
Note 5; 11-bit relative accuracy
Note 5; 12-bit relative accuracy
Note 7
Note 5; Monotonic to 12-bits
Note 5; Monotonic to 12-bits
Note 17
Note 5
Note 5
At IO1 (Pin 1); Note 18
Note 5
Output Amplifier HOS-050;
Note 8
Note 9
Full scale transition; Note 10
Note 5; data inputs VIH
Note 5; data inputs VIH
Note 5; data inputs VIL
Note 5; data inputs VIL
Note 11
Measured at output IO1;
Note 12
Measured at output IO1;
Note 13
VDD = 14 to 16V
Pin 19 to GND
Note 5 and 14
HS7541A
12-Bit CMOS Multiplying DAC
2
© Copyright 2000 Sipex Corporation

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