PS2503-1, -2, -4, PS2503L-1, -2, -4
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
(PS2503-1) (PS2503-2, 4)
(PS2503L-1) (PS2503L-2, 4)
Diode
Reverse Voltage
VR
6
6
Forward Current (DC)
IF
80
80
Power Dissipation Derating
∆PD/˚C
1.5
1.2
Power Dissipation
PD
150
120
Peak Forward Current
IF(Peak)
1
1
(PW = 100 µs, Duty Cycle 1 %)
Transistor
Collector to Emitter Voltage
VCEO
40
40
Emitter to Collector Voltage
VECO
0.6
0.6
Collector Current
IC
30
30
Power Dissipation Derating
∆PC/˚C
1.5
1.2
Power Dissipation
PC
150
120
Coupled
Isolation Voltage*1
BV
5 000
5 000
Storage Temperature
Operating Temperature
Tstg
–55 to +150
Topt
–55 to +100
–55 to +150
–55 to +100
Lead Temperature (Soldering 10 s)
Tsol
260
260
*1 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output.
V
mA
mW/˚C
mW/Channel
A
V
V
mA
mW/˚C
mW/Channel
Vr.m.s.
°C
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
Forward Voltage
Diode
Reverse Current
Junction Capacitance
Transistor Collector to Emitter Dark Current
Current Transfer Ratio*2
Collector Saturation Voltage
Coupled Isolation Resistance
Isolation Capacitance
Rise Time*3
Fall Time*3
SYMBOL MIN.
VF
IR
Ct
ICEO
CTR
100
VCE(sat)
R1-2
1011
C1-2
tr
tf
TYP.
1.1
50
200
0.5
20
30
MAX. UNIT
1.3
V
5
µA
pF
100 nA
400 %
0.25 V
Ω
pF
µs
µs
TEST CONDITIONS
IF = 1 mA
VR = 5 V
V = 0, f = 1 MHz
VCE = 40 V, IF = 0
IF = 1 mA, VCE = 5 V
IF = 1 mA, IC = 0.2 mA
Vin-out = 1 kV
V = 0, f = 1 MHz
VCC = 5 V, IF = 1 mA, RL = 10 kΩ
VCC = 5 V, IF = 1 mA, RL = 10 kΩ
*2 CTR rank (only PS2503-1, PS2503L-1)
K : 200 to 400
L : 150 to 300
M : 100 to 200
*3 Test Circuit for Switching Time
PULSE INPUT
PW = 100 µ s
Duty Cycle
= 1/10
IF
50 Ω
VCC
VOUT
RL = 10 kΩ
2