IL56B データシートの表示（PDF） - Infineon Technologies

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IL56B

No Base Connection Photodarlington Optocoupler

Infineon Technologies 

IL55B/IL56B/MOC8021

No Base Connection

Photodarlington

Optocoupler

FEATURES

• High Collector-Emitter Breakdown Voltage,

80 V minimum

• High Isolation Resistance, 1011 Ω Typical

• Standard Plastic DIP Package

• No Base Terminal Connection for Improved

Common Mode Interface Immunity

• Underwriters Lab File #E52744

•

V

DE

VDE Approval #0884 Available with Option 1

DESCRIPTION

The IL5xB and MOC8021 are optically coupled isola-

tors with a Gallium Arsenide infrared LED and a silicon

photodarlington sensor. Switching can be achieved

while maintaining a high degree of isolation between

driving and load circuits. These optocouplers can be

used to replace reed and mercury relays with advan-

tages of long life, high speed switching and elimina-

tion of magnetic fields.

ABSOLUTE MAXIMUM RATINGS

TA=25°C (except where noted)

Emitter

Peak Reverse Voltage...........................................3.0 V

Continuous Forward Current ............................. 60 mA

Power Dissipation at 25°C.............................. 100 mW

Derate Linearly from 55°C ........................ 1.33 mW/°C

Detector

Collector-Emitter Breakdown Voltage, BVCEO .......80 V

Emitter-Collector Breakdown Voltage BVECO .......5.0 V

Collector (load) Current.................................... 125 mA

Power Dissipation at 25°C Ambient ............... 150 mW

Derate Linearly from 25°C .......................... 2.0 mW/°C

Package

Total Dissipation at 25°C Ambient ................. 250 mW

Derate Linearly from 25°C .......................... 3.3 mW/°C

Isolation Test Voltage (between

emitter and detector referred to

standard climate 23°C/50%RH,

DIN 50014).............................................. 5300 VRMS

Creepage ...................................................... ≥7.0 mm

Clearance....................................................... ≥7.0 mm

Tracking Resistance, Group III

(KC>600 per VDE 110 § 6,Table 3

and DIN 53480/VDE 0330, Part 1

Isolation Resistance

VIO=500 V, TA=25°C....................................... 1012 Ω

VIO=500 V, TA=100°C..................................... 1011 Ω

Storage Temperature ........................–55°C to +150°C

Operating Temperature ....................–55°C to +100°C

Lead Soldering Time at 260°C .......................... 10 sec.

Dimensions in inches (mm)

321

pin one ID

.248 (6.30)

.256 (6.50)

.039

(1.00)

Min.

4°

typ.

.018 (0.45)

.022 (0.55)

Anode 1

6 NC

4 56

.335 (8.50)

.343 (8.70)

.048 (0.45)

.022 (0.55)

Cathode 2

NC 3

5 Collector

4 Emitter

.300 (7.62)

typ.

.130 (3.30)

.150 (3.81)

.031 (0.80) min. 3°–9°

.031 (0.80)

.035 (0.90)

.100 (2.54) typ.

18°

.010 (.25)

typ.

.300–.347

(7.62–8.81)

.114 (2.90)

.130 (3.0)

ELECTRICAL CHARACTERISTICS, TA=25°C (except where noted)

Table 1.

Parameter

Min. Typ. Max. Unit Condition

Emitter

Forward Voltage

Reverse Current

Capacitance

Detector

—

1.25 1.5 V

IF=50 mA

—

0.1 10

µA

VR=3.0 V

—

25

—

pF

VR=0 V

BVCEO

BVECO

ICEO

Package

80

—

5.0 10

—

—

—

V

—

V

1.0 µA

IC=1.0 mA,

IF=0

IE=100 µA,

IF=0

VCE=60 V,

IF=0

Current Transfer Ratio

IL55B

IL56B/MOC8021

500 —

—

%

IF=10 mA

1000

VCE =1.5 V

Coupling Capacitance —

1.5 —

pF

—

Turn-On Time

Turn-Off Time

—

5.0 —

µs

VCC=10 V

—

100 —

µs

IF=5.0 mA

RL=100 Ω

 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA

www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)

2–93

IL55B/56B/MOC8021

May 30, 2000-09

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