NTE3031 データシートの表示（PDF） - NTE Electronics
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NTE3031 Datasheet PDF : 2 Pages
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NTE3031
Phototransistor Detector
NPN–Si, Visible & IR
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Device Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Lead temperature (During Soldering, 3 min), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static Characteristics
Collector Dark Current
Collector–Emitter Breakdown Voltage
Emitter–Collector Breakdown Voltage
Saturation Voltage
Optical Characteristics
ID
VCE = 10V
V(BR)CEO IC = 100µA
V(BR)ECO IE = 100µA
VCE(sat) IC = 0.4mA
– – 100 nA
30 – – V
5––V
– 0.2 – V
Light Current
Photo Current Rise Time
IL
VCE = 5V, RL = 100Ω, Note 1 1
–
– mA
tr
RL = 1000Ω, VCC = 5V,
IL = 1mA (Peak)
– 6 – µs
Note 1. Radiation flux density (H) equal to 5mW/cm2 emitted from a tungsten source at a color
temperature of 2875 K.
Note 2. Angular response is defined as the total included angle between the half sensitivity points
and assuming a point source.
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