QEE213(2001) データシートの表示（PDF） - Fairchild Semiconductor
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QEE213 Datasheet PDF : 4 Pages
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PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE213
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(2,3,4)
Soldering Temperature (Flow)(2,3)
Continuous Forward Current
Reverse Voltage
Peak Forward Current(5)
Power Dissipation(1)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
IF
VR
IFP
PD
Rating
-40 to + 100
-40 to + 100
240 for 5 sec
260 for 10 sec
100
5
1
100
Unit
°C
°C
°C
°C
mA
V
A
mW
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
Parameter
Test Conditions
Symbol
Min
Typ
Peak Emission Wavelength
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity
Rise Time
Fall Time
IF = 100 mA
IF = 100 mA
IF = 100 mA, tp = 20 ms
VR = 5 V
IF = 100 mA, tp = 20 ms
IF = 100 mA
tp = 100 µs, T = 10 mS
lP
—
940
U
—
±25
VF
—
—
IR
—
—
Ie
2
—
tr
—
1
tf
—
1
Max
Units
—
nm
—
Deg.
1.5
V
10
µA
—
mW/sr
—
µs
—
NOTES
1. Derate power dissipation linearly 2.67 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16” (1.6 mm) minimum from housing.
5. Pulse conditions: tp = 100 µs, T = 10 ms.
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9/18/01 DS300239
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