2N6042 データシートの表示（PDF） - ON Semiconductor
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2N6042 Datasheet PDF : 6 Pages
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PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045
20
10
5.0
500 ms
2.0
TJ = 150°C
1.0 ms
5.0 ms
dc
1.0
BONDING WIRE LIMITED
0.5
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
0.2
SECOND BREAKDOWN LIMITED
0.1 CURVES APPLY BELOW RATED VCEO
2N6040, 2N6043
0.05
2N6045
100 ms
0.02
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active−Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150°C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
10,000
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1.0 2.0
TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
PNP
NPN
5.0 10 20 50 100 200
f, FREQUENCY (kHz)
500 1000
Figure 6. Small−Signal Current Gain
300
TJ = 25°C
200
Cob
100
70
Cib
50
30
0.1 0.2
PNP
NPN
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
100
50
PNP
2N6040, 2N6042
NPN
2N6043, 2N6045
20,000
10,000
7000
5000
3000
2000
TJ = 150°C
25°C
1000
700
500 - 55°C
VCE = 4.0 V
20,000
10,000
7000
5000
3000
2000
1000
700
500
TJ = 150°C
25°C
- 55°C
VCE = 4.0 V
300
200
0.1
300
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
200
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
5.0 7.0 10
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