TN5415A データシートの表示（PDF） - Fairchild Semiconductor

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TN5415A

PNP High Voltage Amplifier

Fairchild Semiconductor 

PNP High Voltage Amplifier

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown Voltage* IC = 50 mA, IB = 0

200

V

V(BR)CBO

Collector-Base Breakdown Voltage

IC = 100 µA, IE = 0

200

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 100 µA, IC = 0

4.0

V

ICBO

Collector Cutoff Current

VCB = 175 V

50

µA

ICEX

Collector Cutoff Current

VCE = 200 V, VBE = 1.5 V (rev)

50

µA

ICEO

Collector Cutoff Current

VCE = 150 V

50

µA

IEBO

Emitter Cutoff Current

VEB = 4.0 V, IC = 0

20

µA

ON CHARACTERISTICS*

hFE

DC Current Gain

VCE(sat)

VBE(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

VCE = 10 V, IC = 50 mA

IC = 50 mA, IB = 5.0 mA

IC = 50 mA, VCE = 10 V

SMALL SIGNAL CHARACTERISTICS

Cob

Output Capacitance

Cib

Input Capacitance

hfe

Small-Signal Current Gain

Re(hie)

IS /b

Input Resistance

Safe Operating Area

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

VCB = 10 V, f = 1.0 MHz

VEB = 5.0 V, f = 1.0 MHz

IC = 5.0 mA, VCE = 10 V,

f = 5.0 MHz

IC = 5.0 mA, VCE = 10 V,

f = 1.0 kHz

VCE = 10 V, IC = 5.0 mA

VCE = 100 V, t = 100 mS

30

150

2.5

V

1.5

V

15

pF

75

pF

3.0

25

300

Ω

100

mA

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