Q68000-A6479 データシートの表示（PDF） - Infineon Technologies

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Q68000-A6479

PNP Silicon Transistors for High Voltages

Infineon Technologies 

SMBTA 92

SMBTA 93

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA

SMBTA 92

SMBTA 93

Collector-base breakdown voltage

IC = 100 µA

SMBTA 92

SMBTA 93

Emitter-base breakdown voltage

IE = 100 µA

Collector-base cutoff current

VCB = 200 V

VCB = 160 V

VCB = 200 V, TA = 150 ˚C

VCB = 160 V, TA = 150 ˚C

SMBTA 92

SMBTA 93

SMBTA 92

SMBTA 93

Emitter-base cutoff current

VEB = 3 V

DC current gain

IC = 1 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V1)

IC = 30 mA, VCE = 10 V1)

SMBTA 92

SMBTA 93

Collector-emitter saturation voltage1)

IC = 20 mA, IB = 2 mA

SMBTA 92

SMBTA 93

Base-emitter saturation voltage1)

IC = 20 mA, IB = 2 mA

AC characteristics

Transition frequency

IC = 10 mA, VCE = 20 V, f = 100 MHz

Output capacitance

VCB = 20 V, f = 1 MHz

SMBTA 92

SMBTA 93

Symbol

Values

Unit

min. typ. max.

V(BR)CE0

300 –

200 –

V(BR)CB0

300 –

200 –

V(BR)EB0 5

–

ICB0

–

–

–

–

–

–

–

–

IEB0

–

–

hFE

25

–

40

–

25

–

25

–

VCEsat

–

–

–

–

VBEsat

–

–

V

–

–

–

–

–

250 nA

250 nA

20

µA

20

µA

100 nA

–

–

–

–

–

V

0.5

0.4

0.9

fT

50

–

–

MHz

Cobo

pF

–

–

6

–

–

8

1) Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group

2

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