KSA1010
High Speed High Voltage Switching
• Industrial Use
• Complement to KSC2334
1
TO-220
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
ICP
*Collector Current (Pulse)
IB
Base Current
PC
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
TJ
Junction Temperature
TSTG
Storage Temperature
* PW≤300µs, Duty Cycle≤10%
Value
- 100
- 100
-7
-7
- 15
- 3.5
40
1.5
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
©2001 Fairchild Semiconductor Corporation
Rev. A1, August 2001