KSA1010 データシートの表示（PDF） - Fairchild Semiconductor

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KSA1010

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Electrical Characteristics TC=25°C unless otherwise noted

Symbol

Parameter

Test Condition

VCEO(sus)

VCEX(sus)1

Collector-Emitter Sustaining Voltage

Collector-Emitter Sustaining Voltage

IC = - 5A, IB1 = - 0.5A, L = 1mH

IC = - 5A, IB1 = - IB2 = - 0.5A

VBE(off) = 5V, L = 180µH

Clamped

VCEX(sus)2

Collector-Emitter Sustaining Voltage

IC = - 10A, IB1 = - 1A

IB2 = 0.5A, VBE(off) = 5V

L = 180µH, Clamped

ICBO

ICER

Collector Cut-off Current

Collector Cut-off Current

ICEX1

ICEX2

Collector Cut-off Current

Collector Cut-off Current

IEBO

Emitter Cut-off Current

hFE1

hFE2

hFE3

* DC Current Gain

VCE(sat)

* Collector-Emitter Saturation Voltage

VBE(sat)

* Base-Emitter Saturation Voltage

tON

Turn On Time

tSTG

Storage Time

tF

Fall Time

Pulse Test: PW≤350µs, Duty Cycle≤2%

VCB = - 100V, IE = 0

VCE = - 100V, RBE = 51Ω

TC = 125°C

VCE = - 100V, VBE(off) = 1.5V

VCE = - 100V, VBE(off) = 1.5V

TC = 125°C

VEB = - 5V, IC= 0

VCE = - 5V, IC = - 0.5A

VCE = - 5V, IC = - 3A

VCE = - 5V, IC = - 5A

IC = - 5A, IB = - 0.5A

IC = - 5A, IB = - 0.5A

VCC = - 50V, IC = - 5A,

IB1 = - IB2 = - 0.5A

RL = 10Ω

Min.

- 100

- 100

- 100

40

40

20

Max.

- 10

-1

- 10

-1

- 10

200

- 0.6

- 1.5

0.5

1.5

0.5

Units

V

V

V

µA

mA

µA

mA

uA

V

V

µs

µs

µs

hFE Classification

Classification

hFE2

R

40 ~ 80

O

60 ~ 120

Y

100 ~ 200

©2001 Fairchild Semiconductor Corporation

Rev. A1, August 2001

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