SILICON P LASTIC POWER TRANSISTOR
PNP MJE2955T
10A 75W
Technical Data
…designed for general-purpose switching and amplifier application.
F DC Current Gain - h FE = 20 – 100 @ IC = 4Adc
F Collector-Emitter Saturation Voltage – VCE(sat) = 1.1 Vdc (Max) @ IC = 4Adc
F Excellent Safe Operating Area
F TO-220 Package
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector- Emitter Voltage
Collector – Base Voltage
Emitter Base Voltage
Collector Current – Continuos
Base Current – Continuos
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance junction to case
V CEO
V CB
V EB
IC
IB
PD
Tj,Tstg
60
70
5
10
6
75
0.6
-65 to +150
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Symbol
R thjc
Max.
1.67
Unit
°C/W