NE651R479A-T1 データシートの表示（PDF） - NEC => Renesas Technology
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NE651R479A-T1 Datasheet PDF : 8 Pages
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NE651R479A
TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED)
(TA = +25 °C, unless otherwise specified, using NEC standard test fixture.)
Parameter
Output Power
Drain Current
Power Added Efficiency
Linear Gain Note
Symbol
Test Conditions
Pout f = 900 MHz, VDS = 3.5 V,
ID
Pin = +13 dBm, Rg = 1 kΩ,
ηadd IDset = 50 mA (RF OFF)
GL
MIN.
−
−
−
−
TYP.
27.0
230
60
14.0
MAX.
−
−
−
−
Unit
dBm
mA
%
dB
Note Pin = 0 dBm
TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED)
(TA = +25 °C, unless otherwise specified, using NEC standard test fixture.)
Parameter
Output Power
Drain Current
Power Added Efficiency
Linear Gain Note
Symbol
Test Conditions
Pout f = 1.9 GHz, VDS = 5.0 V,
ID
Pin = +15 dBm, Rg = 1 kΩ,
ηadd IDset = 50 mA (RF OFF)
GL
MIN.
−
−
−
−
TYP.
29.5
350
58
12.0
MAX.
−
−
−
−
Unit
dBm
mA
%
dB
Note Pin = 0 dBm
TYPICAL CHARACTERISTICS (TA = +25 °C)
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
30
500
VDS = 3.5 V
IDset = 50 mA (RF OFF)
Rg = 1 kΩ, f = 1.9 GHz
25
400
Pout
20
300
15
200
ID
10
100
5
–5
0
0
5
10 15 20 25
Input Power Pin (dBm)
Remark The graph indicates nominal characteristics.
Data Sheet P13670EJ2V0DS00
3
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